Characterization of an individual grain boundary in metal-induced laterally crystallized polycrystalline silicon thin-film devices

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2020, Pages 1655-1660

  Wang, M ^a   Wong, M ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Grain boundary; Lateral crystallization; Nickel; Polycrystalline silicon; Thin film transistor

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTALLIZATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; GRAIN BOUNDARIES; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; THIN FILM TRANSISTORS;

CARRIER TRANSPORT; LATERAL CRYSTALLIZATION; POLYCRYSTALLINE SILICON;

ELECTRON DEVICE TESTING;

EID: 0035424982     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936584     Document Type: Article

References (17)