Directional diffusion and void formation at a Si (001) bonded wafer interface

Journal of Applied Physics

Volumn 92, Issue 4, 2002, Pages 1945-1949

  Esser, R H ^a   Hobart, K D ^a   Kub, F J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOND INTERFACE; BONDED INTERFACE; BONDED WAFERS; BONDING INTERFACES; DEVICE STRUCTURES; DIRECTIONAL DIFFUSION; ENABLING TECHNOLOGIES; HYDROPHOBIC BONDING; LOW TEMPERATURES; REGULAR GRIDS; SI(0 0 1); VOID DENSITY; VOID FORMATION;

PHYSICAL PROPERTIES; PHYSICS;

HYDROPHOBICITY;

EID: 0037103660     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1491590     Document Type: Article

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