Characterization of a bi-directional double-side double-gate IGBT fabricated by wafer bonding

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 125-128

  Hobart, K D ^a   Kub, F J ^a   Ancona, M ^a   Neilson, J M ^a   Brandmier, K ^a   Waind, P R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); MOS DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SWITCHING;

WAFER BONDING;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034829334     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Numerical experiment for 2500 V double gate bipolar mode MOSFETS (DGIGBT) and analysis for large safe operating area (SOA)
2. Analysis of double trench insulated gate bipolar transistor
3. 1800 V bipolar-mode MOSFETs: A fist application of silicon wafer direct bonding (SBD) technique to a power device
4. Influence of a bonded interface on the DC-characteristics of high voltage bipolar transistor
5. On the properties of silicon wafers for IGBT use manufactured by direct bonding method
6. + buffer layer
7. Fabrication of a double-side IGBT by very low temperature wafer bonding
8. Electrical characteristics of low temperature direct silicon-silicon bonding for power device applications
9. Low-temperature atmospheric silicon-silicon wafer bonding for power electronic applications