A 6 kV thyristor fabricated by direct wafer bonding

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 211-214

  Hobart, K D ^a   Kub, F J ^a   Pattanayak, D ^a   Piccone, D ^a   Patel, M ^a   Hits, D ^a   Rodrigues, R ^a   Ayele, G ^a   Colinge, C A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; BONDING; CATHODES; ELECTRIC BREAKDOWN; SWITCHING; TRANSISTORS; WSI CIRCUITS;

WAFER BONDING;

THYRISTORS;

EID: 0034829458     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. 1800 V bipolar-mode MOSFETs: A fist application of silicon wafer direct bonding (SBD) technique to a power device
2. Influence of a bonded interface on the DC-characteristics of high voltage bipolar transistor
3. On the properties of silicon wafers for IGBT use manufactured by direct bonding method
4. Study of Si-wafer directly bonded interface effect on power device characteristics
5. + buffer layer
6. Fabrication of a double-side IGBT by very low temperature wafer bonding
7. Characterization of Spontaneously Bonded Hydrophobic Silicon Surfaces
8. Electrical characteristics of low temperature direct silicon-silicon bonding for power device applications
9. Low-temperature atmospheric silicon-silicon wafer bonding for power electronic applications
10. Misorientation induced defects at silicon bonding interfaces: Structural and electrical investigations