Determination of the atomic geometry of the GaAs(001)2 × 4 surface by dynamical RHEED intensity analysis: The β2 (2 × 4) model

Surface Science

Volumn 418, Issue 1, 1998, Pages 273-280

  McCoy, J M ^a,d   Korte, U ^b   Maksym, P A ^c  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF OSNABRÜCK   (Germany)

^c UNIVERSITY OF LEICESTER   (United Kingdom)

^d Alstom UK   (United Kingdom)

Author keywords

Electron solid interactions; Gallium arsenide; Low index single crystal surfaces; Morphology; Reflection high energy electron diffraction (RHEED); Roughness and topography; Scattering and diffraction; Semiconducting surfaces; Surface structure

Indexed keywords

ALGORITHMS; COMPUTATIONAL METHODS; CRYSTAL ORIENTATION; DIMERS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SURFACE ROUGHNESS;

LOW INDEX SINGLE CRYSTALS; MARQUARDT ALGORITHM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032205026     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00723-7     Document Type: Article

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