Structure of Se-adsorbed GaAs(111)A-(2√3×2√3)-R30° surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 12, 1999, Pages 8032-8036

  Ohtake, Akihiro ^a,b   Komura, Takuji ^a,c,d   Hanada, Takashi ^a,c,d   Miwa, Shiro ^a,b   Yasuda, Tetsuji ^a,c   Arai, Kenta ^a,c,d   Yao, Takafumi ^a,c,d  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b JRCAT Angstrom Technology Partnership (ATP)   (Japan)

^c NATL INST FOR ADV INTERDISC RES   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001391250     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.8032     Document Type: Article

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