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Volumn 65, Issue 20, 2002, Pages 2053081-2053088
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Electronic structure of the GaSe/Si(111) and InSe/Si(111) heterojunctions
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Author keywords
[No Author keywords available]
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Indexed keywords
GALLIUM;
SELENIUM;
SILICON;
ARTICLE;
ATOMIC PARTICLE;
CALCULATION;
CHEMICAL BINDING;
ELECTRONICS;
MATHEMATICAL COMPUTING;
MOLECULAR MODEL;
PROCESS OPTIMIZATION;
QUANTITATIVE ANALYSIS;
SEMICONDUCTOR;
STRESS STRAIN RELATIONSHIP;
STRUCTURE ANALYSIS;
SURFACE CHARGE;
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EID: 0037095532
PISSN: 01631829
EISSN: None
Source Type: Journal
DOI: 10.1103/PhysRevB.65.205308 Document Type: Article |
Times cited : (14)
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References (43)
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