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Volumn 248, Issue 1-4, 1998, Pages 67-73
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On the growth process of a layered material on a covalent substrate: GaSe/Si
a,b
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Author keywords
GaSe Si; Layered compound; X ray diffraction
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Indexed keywords
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL ORIENTATION;
EPITAXIAL GROWTH;
FILM GROWTH;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR GROWTH;
STRAIN;
STRESS RELAXATION;
SUBSTRATES;
VAN DER WAALS FORCES;
X RAY CRYSTALLOGRAPHY;
FACE CENTERED CUBIC (FCC) STRUCTURE;
GALLIUM SELENIDE;
GRAZING INCIDENCE X RAY DIFFRACTION (GIXD) ANALYSIS;
SEMICONDUCTING FILMS;
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EID: 0032093361
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-4526(98)00205-1 Document Type: Article |
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Times cited : (8)
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References (8)
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