Influence of surface reconstruction on MBE growth of layered GaSe on Si(111) substrates

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 557-562

  Reqqass, H ^a   Lacharme, J P ^a   Eddrief, M ^a   Sebenne C A ^a   Le Thanh, V ^a   Zheng, Y L ^b   Petroff J F ^b  

^a CNRS   (France)

^b UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; INTERFACES (MATERIALS); MOLECULAR BEAMS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE STRUCTURE; THIN FILMS;

SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030235745     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00202-4     Document Type: Article

References (10)

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