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Applied Surface Science

Volumn 92, Issue , 1996, Pages 357-361

Surface electronic properties of GaSe-covered Si(111) upon UHV thermal desorption of the GaSe epitaxial layer

(5) Reqqass, H a Lacharme, J P a Sebenne C A a Eddrief, M a Le Thanh, V a

a CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; DISSOCIATION; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; HEATING; PHOTOEMISSION; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPY; SUBSTRATES; SURFACE PROPERTIES; THERMAL EFFECTS; VACUUM APPLICATIONS;

GALLIUM SELENIDE; JOULE HEATING; THERMAL DESORPTION; ULTRAHIGH VACUUM APPLICATIONS;

SEMICONDUCTING SILICON;

EID: 0030562342 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/0169-4332(95)00255-3 Document Type: Article

Times cited : (16)

References (10)

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