Growth of GaSe ultrathin films on Si(111) substrates analyzed by the x-ray standing-wave technique

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 19, 1997, Pages 12296-12302

  Koebel A ^a   Zheng, Y ^a   Petroff J ^a   Boulliard, J ^a   Capelle, B ^a   Eddrief, M ^a  

^a UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343278109     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.12296     Document Type: Article

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