GaSe/Si(111) heteroepitaxy: The early stages of growth

Journal of Crystal Growth

Volumn 162, Issue 3-4, 1996, Pages 135-141

  Zheng, Y ^a   Koebel A ^a   Petroff J F ^a   Boulliard, J C ^a   Capelle, B ^a,b   Eddrief, M ^c  

^a UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

^b SYNCHROTRON SOLEIL   (France)

^c SORBONNE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHEMICAL BONDS; CRYSTAL STRUCTURE; FILM GROWTH; INTERFACES (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS; VAN DER WAALS FORCES;

HETEROEPITAXY; THREE DIMENSIONAL MATERIALS; X RAY STANDING WAVE TECHNIQUES;

EPITAXIAL GROWTH;

EID: 0030147847     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00952-3     Document Type: Article

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