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Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 6350-6353

Photo-induced refractive index change in hydrogenated amorphous silicon oxynitride

(4) Kato, Hiromitsu a Fujimaki, Makoto a,b,c Noma, Takashi a,d Ohki, Yoshimichi a

a WASEDA UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

d SANYO ELECTRIC CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN CONTENT; PARAMAGNETIC DEFECTS; PHOTO-INDUCED; PLANAR DIFFRACTION GRATING; REFRACTIVE INDEX CHANGES; ULTRAVIOLET PHOTON;

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; HYDROGENATION; PARAMAGNETISM; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY;

SILICON NITRIDE;

EID: 0037094738 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1461894 Document Type: Article

Times cited : (15)

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