Mechanisms of photosensitivity in germanosilica films

Journal of Applied Physics

Volumn 81, Issue 11, 1997, Pages 7497-7505

  Bazylenko, M V ^a   Gross, M ^a   Moss, D ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANOSILICA FILMS; LORENTZ-LORENTZ RELATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLARIZABILITY; WAVELENGTH DISPERSIVE X RAY SPECTROSCOPY;

ANNEALING; CHEMICAL VAPOR DEPOSITION; ION BOMBARDMENT; OXYGEN; PHOTOSENSITIVITY; PLASMAS; POROSITY; REFRACTIVE INDEX; SEMICONDUCTING GERMANIUM COMPOUNDS; STRESSES; THICKNESS MEASUREMENT; ULTRAVIOLET RADIATION;

SEMICONDUCTING FILMS;

EID: 0031168833     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365291     Document Type: Article

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