Superiority of an AlN intermediate layer for heteroepitaxy of hexagonal GaN

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 8, 2000, Pages 4869-4874

  Sasaki, Masahiro ^a   Nakayama, Tomoo ^a   Shimoyama, Norio ^b   Suemasu, Takashi ^a   Hasegawa, Fumio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TRI Chemical Laboratory Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DECOMPOSITION; EPITAXIAL GROWTH; INSERTION LOSSES; MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

HETEROEPITAXIAL GROWTH; MONOMETHYL HYDRAZINES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034245190     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4869     Document Type: Article

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