Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers

Applied Physics A: Materials Science and Processing

Volumn 72, Issue 4, 2001, Pages 495-497

  Zhu, C F ^a   Fong, W K ^a   Leung, B H ^a   Surya, C ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GROUND STATE; LIGHT REFLECTION; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; RELAXATION PROCESSES; RESIDUAL STRESSES; SPECTROSCOPIC ANALYSIS;

EXCITONIC TRANSITION ENERGY; INTERMEDIATE TEMPERATURE BUFFER LAYER; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

THIN FILMS;

EID: 0034968945     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100797     Document Type: Article

References (21)