Electronic transport properties of SiGe alloys and heterostructures grown by Sb assisted MBE

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 234-237

  Pinto, N ^a   Murri, R ^a   Pasquali, C ^a  

^a UNIVERSITY OF CAMERINO   (Italy)

Author keywords

Alloys; Antimony; Hall mobility; Heterostructures; SiGe; Surfactant

Indexed keywords

ANTIMONY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SILICON ALLOYS; SURFACE ACTIVE AGENTS;

SURFACTANT MEDIATED EPITAXY (SME);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037074833     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00792-9     Document Type: Conference Paper

References (21)