Selectively excited photoluminescence of GaAs1-xSbx/GaAs single quantum wells

Applied Physics Letters

Volumn 81, Issue 20, 2002, Pages 3795-3797

  Luo, X D ^a   Hu, C Y ^a   Xu, Z Y ^a   Luo, H L ^b   Wang, Y Q ^b   Wang, J N ^b   Ge, W K ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTONS; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

EXCITATION ENERGIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037065118     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1521250     Document Type: Article

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