Annealing of gallium nitride under high-N2 pressure

Physica B: Condensed Matter

Volumn 265, Issue 1-4, 1999, Pages 295-299

  Porowski, S ^a   Jun, J ^a   Krukowski, S ^a   Grzegory, I ^a   Leszczynski, M ^a   Suski, T ^a   Teisseyre, H ^a   Foxon, C T ^b   Korakakis, D ^b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; DIFFUSION; ENERGY GAP; EPITAXIAL GROWTH; HIGH PRESSURE EFFECTS; ION IMPLANTATION; NITROGEN; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMAL EFFECTS;

GALLIUM NITRIDE; HETEROEPITAXIAL LAYER; HOMOEPITAXIAL LAYER;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033515338     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(98)01414-8     Document Type: Article

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