Growth and properties of bulk single crystals of GaN

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 15-25

  Suski, T ^a   Perlin, P ^a   Leszczynski, M ^a   Teisseyre, H ^a   Grzegory, I ^a   Jun, J ^a   Bockowski, M ^a   Porowski, S ^a   Pakula, K ^a   Wysmolek, A ^a   Baranowski, J M ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; ELECTRONS; EPITAXIAL GROWTH; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; LUMINESCENCE; MAGNESIUM; NITRIDES; PHYSICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS; ZINC;

ACCEPTORS; BULK SINGLE CRYSTALS; FREE ELECTRON CONCENTRATION; GALLIUM NITRIDE; HOMOEPITAXIAL GROWTH; PARASITIC EFFECT;

SINGLE CRYSTALS;

EID: 0029726419     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (34)