Electric field profiling by current transients in silicon diodes

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 476, Issue 3, 2002, Pages 614-620

  Menichelli, D ^a,b   Serafini, D ^a,b   Borchi, E ^a,c   Toci, G ^d  

^a UNIVERSITY OF FLORENCE   (Italy)

^b INFN SEZIONE DI FIRENZE   (Italy)

^c INFM   (Italy)

^d CNR   (Italy)

Author keywords

Electric field distribution; Linear integral equation; Radiation damage; Silicon detectros; TCT

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; ELECTRON TRANSPORT PROPERTIES; INTEGRAL EQUATIONS; ITERATIVE METHODS; LINEAR EQUATIONS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SILICON SENSORS;

ELECTRIC FIELD DISTRIBUTIONS; SILICON DIODES;

SEMICONDUCTOR DIODES;

EID: 0037059414     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)01656-4     Document Type: Conference Paper

References (19)