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Volumn 112, Issue 11, 1999, Pages 1359-1367

Shallow- and deep-levels analysis in irradiated medium-resistivity silicon detectors

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0039132815     PISSN: 03693546     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (19)
  • 3
    • 85079969886 scopus 로고    scopus 로고
    • Radiation hardness of silicon detectors -a challenge from high energy physics
    • to be published in
    • LINDSTROEM G., MOLL M. and FRETWURST E., Radiation hardness of silicon detectors -a challenge from high energy physics, to be published in Nucl. Instrum. Methods A.
    • Nucl. Instrum. Methods A.
    • Lindstroem, G.1    Moll, M.2    Fretwurst, E.3
  • 9
    • 85079974104 scopus 로고    scopus 로고
    • Detailed microscopic analysis of deep levels in heavily irradiated-medium resistivity silicon detectors
    • submitted to
    • MENICHELLI D., PIROLLO S. and LI Z., Detailed microscopic analysis of deep levels in heavily irradiated-medium resistivity silicon detectors, submitted to IEEE Trans. Nucl. Sci.
    • IEEE Trans. Nucl. Sci.
    • Menichelli, D.1    Pirollo, S.2    Li, Z.3
  • 12
    • 85080013660 scopus 로고    scopus 로고
    • A new method to analyze deep level spectra of irradiated semiconductors
    • submitted to
    • MENICHELLI D. and BORCHI E., A new method to analyze deep level spectra of irradiated semiconductors, submitted to Mater. Sci. Semicond. Proc.
    • Mater. Sci. Semicond. Proc.
    • Menichelli, D.1    Borchi, E.2
  • 19
    • 0001599099 scopus 로고
    • The lattice vacancy in silicon
    • edited by T. S. PANTELIDES (Gordon & Breach Science)
    • WATKINS G. D., The lattice vacancy in silicon, in Deep Centers in Semiconductors; edited by T. S. PANTELIDES (Gordon & Breach Science) 1986, p. 167.
    • (1986) Deep Centers in Semiconductors , pp. 167
    • Watkins, G.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.