-
3
-
-
85079969886
-
Radiation hardness of silicon detectors -a challenge from high energy physics
-
to be published in
-
LINDSTROEM G., MOLL M. and FRETWURST E., Radiation hardness of silicon detectors -a challenge from high energy physics, to be published in Nucl. Instrum. Methods A.
-
Nucl. Instrum. Methods A.
-
-
Lindstroem, G.1
Moll, M.2
Fretwurst, E.3
-
4
-
-
85080009748
-
Hall effect analysis in irradiated silicon samples with different resistivities
-
to be published in
-
BORCHI E., BRUZZI M., DEZILLIE B., LAZANU S., LI Z. and PIROLLO S., Hall effect analysis in irradiated silicon samples with different resistivities, to be published in IEEE Trans. Nucl. Sci.
-
IEEE Trans. Nucl. Sci.
-
-
Borchi, E.1
Bruzzi, M.2
Dezillie, B.3
Lazanu, S.4
Li, Z.5
Pirollo, S.6
-
7
-
-
0027649007
-
-
LI Z., EREMIN V., STROKAN N. and VERBITSKAYA E., IEEE Trans. Nucl. Sci., 40 (1993) 367.
-
(1993)
IEEE Trans. Nucl. Sci.
, vol.40
, pp. 367
-
-
Li, Z.1
Eremin, V.2
Strokan, N.3
Verbitskaya, E.4
-
9
-
-
85079974104
-
Detailed microscopic analysis of deep levels in heavily irradiated-medium resistivity silicon detectors
-
submitted to
-
MENICHELLI D., PIROLLO S. and LI Z., Detailed microscopic analysis of deep levels in heavily irradiated-medium resistivity silicon detectors, submitted to IEEE Trans. Nucl. Sci.
-
IEEE Trans. Nucl. Sci.
-
-
Menichelli, D.1
Pirollo, S.2
Li, Z.3
-
12
-
-
85080013660
-
A new method to analyze deep level spectra of irradiated semiconductors
-
submitted to
-
MENICHELLI D. and BORCHI E., A new method to analyze deep level spectra of irradiated semiconductors, submitted to Mater. Sci. Semicond. Proc.
-
Mater. Sci. Semicond. Proc.
-
-
Menichelli, D.1
Borchi, E.2
-
16
-
-
0032681130
-
-
EREMIN V., IVANOV A., VERBITSKAYA E., LI Z. and PANDEY S. U., Nucl. Instrum. Methods A, 426 (1999) 120.
-
(1999)
Nucl. Instrum. Methods A
, vol.426
, pp. 120
-
-
Eremin, V.1
Ivanov, A.2
Verbitskaya, E.3
Li, Z.4
Pandey, S.U.5
-
17
-
-
0029452893
-
2
-
San Francisco, USA, October 21-28
-
2, in IEEE Nuclear Science Symposium and Medical Imaging Conference Record, San Francisco, USA, October 21-28, 1995, p. 852.
-
(1995)
IEEE Nuclear Science Symposium and Medical Imaging Conference Record
, pp. 852
-
-
Li, Z.1
Ghislotti, G.2
Kraner, H.W.3
Li, C.J.4
Nielsen, B.5
-
18
-
-
0031118343
-
-
FRETWURST E., EREMIN V., FEICK H., GERHARDT J., LI Z. and LINDSTROM G., Nucl. Instrum. Methods A, 388 (1997) 356.
-
(1997)
Nucl. Instrum. Methods A
, vol.388
, pp. 356
-
-
Fretwurst, E.1
Eremin, V.2
Feick, H.3
Gerhardt, J.4
Li, Z.5
Lindstrom, G.6
-
19
-
-
0001599099
-
The lattice vacancy in silicon
-
edited by T. S. PANTELIDES (Gordon & Breach Science)
-
WATKINS G. D., The lattice vacancy in silicon, in Deep Centers in Semiconductors; edited by T. S. PANTELIDES (Gordon & Breach Science) 1986, p. 167.
-
(1986)
Deep Centers in Semiconductors
, pp. 167
-
-
Watkins, G.D.1
|