메뉴 건너뛰기




Volumn 426, Issue 1, 1999, Pages 192-196

Electric field and space-charge distribution in SI GaAs: Effect of high-energy proton irradiation

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; ELECTRON TRAPS; PROTON IRRADIATION; RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

EID: 0032632270     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)01491-0     Document Type: Article
Times cited : (3)

References (18)
  • 5
    • 0004725926 scopus 로고
    • Defect recognition and image processing in semiconductors and devices
    • in: J. Jimenez (Ed.), Institute of Physics and Physical Society, London
    • K. Berwick, M.R. Brozel, C.M. Buttar, M. Copperthwaite, Y. Hou, Defect recognition and image processing in semiconductors and devices, in: J. Jimenez (Ed.), Proc. 5th Int. Conf., IOP Conf. Proc. No. 135, Institute of Physics and Physical Society, London, 1994, p. 305.
    • (1994) Proc. 5th Int. Conf., IOP Conf. Proc. , vol.135 , pp. 305
    • Berwick, K.1    Brozel, M.R.2    Buttar, C.M.3    Copperthwaite, M.4    Hou, Y.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.