High performance stacked LDD RF LDMOSFET

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 103-106

  Cai, J ^a   Ren, C ^a   Balasubramanian, N ^a   Sin, J K O ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

BLOCKING VOLTAGE;

MOSFET DEVICES;

EID: 0034836250     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. 2-GHz Si power MOSFET technology
2. Modeling and characterization of an 80V silicon LDMOSFET for emerging RFIC applications
3. RF LDMOS with extreme low parasitic feedback capacitance and high hot carrier immunity
4. A review of RESURE technology
5. COOLMOS™ - A new milestone in high voltage power MOS
6. Optimization of the specific on-resistance of the COOLMOS™