SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 166-170

The influence of graded interfaces in the electronic spectrum of nanometer silicon dots

(6) De Sousa, J S a Caetano, E W S a Goncalves J R a Farias, G A a Freire, V N a Da Silva, E F b

a FEDERAL UNIVERSITY OF CEARÁ (Brazil)

b FEDERAL UNIVERSITY OF PERNAMBUCO (Brazil)

Author keywords

Electronic spectrum; Graded interfaces; Si SiO2 quantum dot

Indexed keywords

CHARGE CARRIERS; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; LUMINESCENCE; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

ELECTRONIC SPECTRUM;

INTERFACES (MATERIALS);

EID: 0037042043 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00883-2 Document Type: Article

Times cited : (4)

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