Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD

Journal of Physics D: Applied Physics

Volumn 35, Issue 21, 2002, Pages 2731-2734

  Feng, G ^a   Fu, Y ^a   Xia, J S ^a   Zhu, J J ^a   Zhang, B S ^a   Shen, X M ^a   Zhao, D G ^a   Yang, H ^a   Liang, J W ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; EPITAXIAL GROWTH; FINITE ELEMENT METHOD; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; TWO DIMENSIONAL;

DIFFUSION EQUATIONS; SIDEWALL FACET EVOLUTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037038658     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/35/21/307     Document Type: Article

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