SCOPUS 정보 검색 플랫폼

Volumn 73, Issue 1, 2002, Pages 78-85

In2O3 deposited by reactive evaporation of indium in oxygen atmosphere - Influence of post-annealing treatment on optical and electrical properties

(6) Baba Ali, E a El Maliki, H a Bernede, J C a Sahnoun, M b Khelil, A b Saadane, O a

a UNIVERSITÉ DE NANTES (France)

b UNIVERSITY OF ORAN (Algeria)

Author keywords

Indium oxide; Partial oxygen pressure; Post annealing treatment; Reactive evaporation; Transparent conductive oxide

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CONDUCTIVE FILMS; CRYSTALLINE MATERIALS; DEPOSITION; ELECTRIC CONDUCTIVITY; ENERGY GAP; EVAPORATION; OPTOELECTRONIC DEVICES; OXYGEN; PARTIAL PRESSURE SENSORS; RATE CONSTANTS; SUBSTRATES;

PARTIAL OXYGEN PRESSURES; TRANSPARENT CONDUCTIVE OXIDES;

INDIUM COMPOUNDS;

EID: 0037005639 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(01)00361-3 Document Type: Article

Times cited : (36)

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