40 Gb/s postamplifier and PIN/preamplifier modules for next generation optical front-end systems

Journal of Lightwave Technology

Volumn 20, Issue 12, 2002, Pages 2229-2238

  Dutta, Achyut K ^a   Takechi, Masaru ^b   Virk, Robinder S ^a   Kobayashi, Masahiro ^b   Araki, Keichi ^b   Sato, Keiji ^b   Gentrup, Mark ^c   Ragle, Robert ^c  

^a FUJITSU LABORATORIES OF AMERICA   (United States)

^b FUJITSU LABORATORIES LTD   (Japan)

^c WJ Communications Inc   (United States)

Author keywords

40 Gb s; Front end system; Postamplifier; Transimpedance

Indexed keywords

BINARY SEQUENCES; CURRENT DENSITY; ELECTRIC IMPEDANCE; FREQUENCY CONVERTERS; HIGH ELECTRON MOBILITY TRANSISTORS; OPTICAL COMMUNICATION; OPTICAL FILTERS; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SPONTANEOUS EMISSION;

GALLIUM ARSENIDE AMPLIFIERS; NEXT GENERATION OPTICAL FRONT-END SYSTEMS; POSTAMPLIFIER; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR; TRANSIMPEDANCE;

LIGHT AMPLIFIERS;

EID: 0037005084     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2002.807546     Document Type: Article

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