메뉴 건너뛰기




Volumn 34, Issue 13, 1998, Pages 1351-1352

High-sensitivity 40Gbit/s photoreceiver using GaAs PHEMT distributed amplifiers

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CURRENT DENSITY; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT AMPLIFIERS; LIGHT REFLECTION; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

EID: 0032092864     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980946     Document Type: Article
Times cited : (10)

References (6)
  • 3
    • 11544371428 scopus 로고    scopus 로고
    • High responsivity side illuminated AlGaInAs PIN photodiode for 40Gbit/s - 40GHz applications
    • 22-25 September Edinburgh, UK
    • WANLIN, G., GIRAUDET, L., PRASEUTH, J.P., MIRAS. A., and LEGROS, E.: 'High responsivity side illuminated AlGaInAs PIN photodiode for 40Gbit/s - 40GHz applications'. ECOC'97, 22-25 September 1997, Edinburgh, UK
    • (1997) ECOC'97
    • Wanlin, G.1    Giraudet, L.2    Praseuth, J.P.3    Miras, A.4    Legros, E.5
  • 4
    • 0032484778 scopus 로고    scopus 로고
    • Very high gain, high responsivity, 40GHz narrowband photoreceiver for clock recovery
    • MIRAS, A., LEGROS, E., GIRAUDET, L., VUYE, S., and JOLY, C.: 'Very high gain, high responsivity, 40GHz narrowband photoreceiver for clock recovery', Electron. Lett., 1998, 34, (3), pp. 297-299
    • (1998) Electron. Lett. , vol.34 , Issue.3 , pp. 297-299
    • Miras, A.1    Legros, E.2    Giraudet, L.3    Vuye, S.4    Joly, C.5
  • 6
    • 0030218347 scopus 로고    scopus 로고
    • Low noise 20Gbit/s photoreceiver with distributed GaAs P-HEMT amplifiers
    • LEGROS, E., MERRAR, A., BILLARD, M., JOLY, C., and BLANCONNIER, P.: 'Low noise 20Gbit/s photoreceiver with distributed GaAs P-HEMT amplifiers', Electron. Lett., 1996, 32, (18), pp. 1693-1694
    • (1996) Electron. Lett. , vol.32 , Issue.18 , pp. 1693-1694
    • Legros, E.1    Merrar, A.2    Billard, M.3    Joly, C.4    Blanconnier, P.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.