An engineering method to extract equivalent oxide thickness and its extension to channel mobility evaluation

IEEE Transactions on Electron Devices

Volumn 49, Issue 12, 2002, Pages 2345-2348

  Ootsuka, Fumio ^a,b  

^a SLETI   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Channel mobility; Equivalent oxide thickness (EOT); Extraction method; MOS devices; Nonuniform profile

Indexed keywords

CAPACITANCE; ELECTRIC FIELDS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MOSFET DEVICES; OXIDES;

CHANNEL MOBILITY; EQUIVALENT OXIDE THICKNESS;

ELECTRON MOBILITY;

EID: 0037004329     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.805232     Document Type: Article

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