Implications of advanced microelectronics technologies for heavy ion Single Event Effect (SEE) testing

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn 1, Issue 2, 2002, Pages 328-331

  Poivey, Christian ^a   Barth, Janet A ^a   Reed, Robert ^a   Stassinopoulos, Epaminondas G ^a   LaBel, Kenneth A ^a   Xapsos, Michael ^a  

^a NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COSMIC RAYS; HEAVY IONS; ION BEAMS; MATHEMATICAL MODELS; SPACE APPLICATIONS;

GALACTIC COSMIC RAY; SINGLE EVENT EFFECT TESTING;

MICROELECTRONICS;

EID: 0036989275     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)

1. R. Koga, "Single Event Effect Ground test issues," IEEE TNS, 43, no 2, 661-670, April 1996.
2. A. H. Johnston, "Radiation Effects in Advanced Microelectronics Technologies," RADECS 1997 Proceedings, pp. 1-16.
3. E. G. Stassinopoulos, "Shortcomings in Ground Testing, Environment simulations, and Performance Predictions for Space Applications," RADECS 1991 Proceedings, pp.3-16.
4. S. Duzellier, R. Ecoffet, "Recent Trends in Single Event Effect Ground Testing," IEEE TNS, vol. 43, no 2, pp. 671-677, April 1996.
5. A.J. Tylka & al., "Single Event Upsets caused by Solar Energetic Heavy Ions," IEEE TNS, NS43, pp. 2758, Dec. 1996.
6. J. Barth "Modeling Space Radiation Environment" 1997 IEEE NSREC short course.
7. W. Heinrich, "Calculation of LET Spectra of Heavy Cosmic Ray Nuclei at Various Absorber Depths", Radiation Effects, vol. 34, pp.143-148, 1977.
8. E.G. Stassinopoulos & al., "SEU measurements at the BNL test facility," Trans. Am. Nucl. Soc., vol. 62, pp. 230-232, 1990.
9. M.A. Mc Mahan, 'Radiation Effects Testing at the 88 inch Cyclotron" RADECS 1999 proceedings, pp. 142-147.
10. G. Berger & al., "The Heavy Ion Irradiation Facility at CYCLONE-A dedicated SEE beam line," 1996 IEEE NREC data workshop, pp. 78-83.
11. M. Labrunee & al., "Heavy ion component test coordination," RADECS 1991 proceedings, pp. 577-581.
12. M.A. Xapsos, "Applicability of LET to Single Events in Microelectronic Structures", IEEE Trans. Nucl. Sci., vol. 39, pp. 1613-1621, Dec. 1992.
13. D.K. Nichols & al., "update of Single Event failure in power MOSFETs," IEEE NSREC 1996 dataworkshop, pp. 67-72.
14. J. C. Pickel, "Single Event Effects Rate Prediction," IEEE Trans. Nucl. Sci., vol. 43, no 2, April 1996.
15. H. Dussault, "The effects of ion track structure in simulating Single Event Phenomena," Proceedings of RADECS 1993, pp. 509-516.
16. R. Koga & al., "Comparative SEU sensitivities to relativistic heavy ions," IEEE TNS, vol. 45, no 6, pp. 2475-2482, 1998.
17. P.E. Dodd & al. "Impact of ion energy on Single event Upset," IEEE TNS, vol. 45, no 6, pp. 2483-2491, 1998.
18. S. Duzellier & al. "SEE results using high energy ions," IEEE TNS, vol. 42, no 6, pp. 1797-1802, 1995.
19. R. Ecoffet "Low LET cross section measurements using high energy carbon beam," IEEE TNS, vol. 44, no 6, 1997.
20. R. Koga & al., "SEE sensitivity determination of high density DRAMs with limited range heavy ions," IEEE NSREC 2000 data workshop, pp45-52.