AlGaN/GaN microwave power transistors for S band

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 2001, Pages 27-30

  Uren, M J ^a   Hughes, B T ^a   Hayes, D G ^a   Hilton, K P ^a   Martin, T ^a   Balmer, R S ^a   Birbeck, J C H ^a   Davies, R A ^a  

^a Marconi Optical Components   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; ELECTRON GAS; ENERGY GAP; GALLIUM NITRIDE; INTEGRATED CIRCUIT MANUFACTURE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; THERMAL CONDUCTIVITY;

CURRENT SLUMP EFFECT; DEEP LEVEL DEFECT DENSITY; LATTICE MATCH; MESA ISOLATION PROCESS; MICROWAVE POWER TRANSISTORS; MODULATION DOPING; MULTIFINGER TRANSISTOR; S-BAND;

TRANSISTORS;

EID: 0035574067     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Very-high power density AlGaN/GaN HEMTs
2. Wide bandgap semiconductor transistors for microwave power amplifiers
3. Undoped AlGaN/GaN HEMTs for microwave power amplification
4. RF power performance of passivated AlGaN/GaN HFETs grown on SiC and sapphire
5. Back bias effects in AlGaN/GaN HFETs
6. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
7. Trapping effects and microwave power performance in AlGaN/GaN HEMTs