An introduction to deep submicron CMOS for vertex applications

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 473, Issue 1-2, 2001, Pages 140-145

  Campbell, M ^a   Anelli, G ^a   Cantatore, E ^a   Faccio, F ^a   Heijne, E H M ^a   Jarron, P ^a   Santiard, J C ^a   Snoeys, W ^a   Wyllie, K ^a  

^a CERN   (Switzerland)

Author keywords

CMOS; Readout electronics; Vertex detectors

Indexed keywords

CMOS INTEGRATED CIRCUITS; MICROELECTRONICS; RADIATION DETECTORS; READOUT SYSTEMS;

VERTEX DETECTORS;

HIGH ENERGY PHYSICS;

EID: 0035500980     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)01135-4     Document Type: Conference Paper

References (17)

1. Total dose and single event effects (SEE) in a 0.25 μm CMOS technology
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3. Integrated circuits for particle physics experiments
4. Integrated circuits for particle physics experiments
5. A pixel readout chip for 10-30 Mrad in standard 0.25 μm CMOS
6. A 1006 element hybrid silicon pixel detector with strobed binary readout
7. Low voltage, low power analog CMOS design