Structure design considerations of a sub-50 nm self-aligned double-gate MOSFET

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 23, Issue 12, 2002, Pages 1267-1274

  Yin, Huaxiang ^a   Xu, Qiuxia ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Double gate MOSFET; SCD; Sidewall effect; Structure design

Indexed keywords

FABRICATION; SILICON; STRUCTURAL DESIGN;

DOUBLE GATE; GATE LENGTH; SCOTIA CHANNEL DOPING; SIDEWALL EFFECT; THICKNESS;

MOSFET DEVICES;

EID: 0036923062     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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