GaInNAs: A new material in the quest for communications lasers

Materials Research Society Symposium - Proceedings

Volumn 722, Issue , 2002, Pages 117-133

  Harris Jr , James S ^a   Gambin, Vincent ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LASERS; MATERIALS SCIENCE; NITROGEN; SOLUBILITY;

COMMUNICATION LASERS;

GALLIUM ALLOYS;

EID: 0036902108     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-722-k4.1     Document Type: Conference Paper

References (17)

1. M. Kondow, K. Uomi, A. Niwa, T. Kitantai, S. Watahiki, and Y. Yazawa, "GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance," Jpn. J. Appl. Phys., vol. 35, no. 2B, pp. 1273-1275, Feb., 1996.
2. M. Kondow, S. Natatsuka, T. Kitatani, Y. Yazawa, and M. Okai, "Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode," Electron. Lett., vol. 32, no. 24, pp. 2244-2245, Nov., 1996.
3. J.C. Harmand, G. Ungaro, L. Largeau, and G. Le Roux, "Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN," Appl. Phys. Lett., vol. 77, no. 16, pp. 2482-2484, Oct. 16, 2000.
4. S.G. Spruytte, M.C. Larson, W. Wampler, C.W. Coldren, H.E. Petersen, and J.S. Harris, "Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy," Journal of Crystal Growth, vol. 227-228, pp. 506-515, July, 2001.
5. R.R. LaPierre, B.J. Robinson, and D.A. Thompson, "Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy," Journal of Applied Physics, vol. 79, no. 6, pp. 3021 -3027, Apr. 15, 1996.
6. G.B. Stringfellow, Organometallic vapor-phase epitaxy: theory and practice (Academic Press Boston, 1989) pp. 123.
7. A. Mereuta, G. Saint-Girons, S. Bouchoule, I. Sagnes, F. Alexandre, G. Roux, J. Decobert, and A. Ougazzaden, "(InGa)(NAs)/GaAs structures emitting in 1-1.6μm wavelength range," Optical Materials, vol. 17, no. 1-2, pp. 185-188, June, 2001.
8. I.A. Buyanova, G. Pozina, P.N. Hai, N.Q. Thinh, J.P. Bergman, W.M. Chen, H.P. Xin, and C.W. Tu, "Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy," Appl. Phys. Lett., vol. 77, no. 15, pp. 2325-2327, Oct. 9, 2000.
9. P. Krispin, S.G. Spruytte, J.S. Harris, and K.H. Ploog, "Deep-level defects in MBE-grown Ga(As,N) layers," Physica B, vol. 308-310, pp. 870-873, Dec., 2001.
10. V. Gambin, W. Ha, M. Wistey, S. Kim, and J.S. Harris, 2001 MRS Proceedings.
11. W. Ha, V. Gambin, M. Wistey, S. Bank, S. Kim, and J.S. Harris, 2001 Conference Proceedings Leos.
12. S.G. Spruytte, C.W. Coldren, J.S. Harris, W. Wampler, P. Krispin, K. Ploog, and M.C. Larson, "Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal," Journal of Applied Physics, vol. 89, no. 8, pp. 4401-4406, Apr. 15, 2001.
13. A.Y. Egorov, D. Bernklau, B. Borchert, S. Illek, D. Livshits, A. Rucki, M. Schuster, A. Kaschner, A. Hoffmann, G. Dumitras, M.C. Amann, and H. Riechert, "Growth of high quality InGaAsN heterostructures and their laser application," Journal of Crystal Growth, vol. 227-228, pp. 545-552, July, 2001.
14. X. Yang, M.J. Jurkovic, J.B. Heroux, and W.I. Wang, "Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers," Appl. Phys. Lett., vol. 75, no. 2, pp. 178-180, July 12, 1999.
15. X. Yang, J.B. Heroux, L.F. Mei, and W.I. Wang, "InGaAsNSb/GaAs quantum wells for 1.55μm lasers grown by molecular-beam epitaxy," Appl. Phys. Lett., vol. 78, no. 26, pp. 4068-4070, June 25, 2001.
16. H. Shimizu, K. Kumada, S. Uchiyama, and A. Kasukawa, "1.2μm range GaInAs SQW lasers using Sb as surfactant," Electron. Lett., vol. 36, no. 16, pp. 1379-1381, Aug. 3, 2000.
17. J.S. Harris, Jr., "Tunable long-wavelength vertical-cavity lasers: the engine of next generation optical networks?," IEEE J. Select. Topics Quantum Electron., vol. 6, no. 6, pp. 1145-1160, Dec., 2000.