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Volumn 38, Issue 6, 2002, Pages 461-472

Separation of bulk lifetime and surface recombination velocity obtained by transverse optical probing and multi-wavelength technique

Author keywords

Bulk lifetime; Optical techniques; Process control; Surface recombination velocity

Indexed keywords

CHARACTERIZATION; LASER APPLICATIONS; LASER BEAM EFFECTS; LIGHT ABSORPTION; NONDESTRUCTIVE EXAMINATION; OPTICAL VARIABLES MEASUREMENT; PROCESS CONTROL;

EID: 0036884587     PISSN: 01438166     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0143-8166(01)00175-0     Document Type: Article
Times cited : (7)

References (19)
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    • Linnros, J.1
  • 5
    • 0000120918 scopus 로고    scopus 로고
    • Carrier lifetime measurements using free carrier absorption transients. II Lifetime mapping and effects of surface recombination
    • (1998) J Appl Phys , vol.84 , Issue.1 , pp. 284
    • Linnros, J.1
  • 6
    • 0027539537 scopus 로고
    • Separate contactless measurement of the bulk lifetime and the surface recombination velocity by the harmonic generation of the excess carriers
    • (1993) Solid State Elec , vol.36 , Issue.2
    • Otaredian, T.1
  • 8
    • 0000020111 scopus 로고    scopus 로고
    • Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers
    • (1997) J Appl Phys , vol.81 , pp. 6186
    • Schmidt, J.1    Aberle, A.J.2
  • 15
    • 36549096341 scopus 로고
    • Analysis of the interactions of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity
    • (1987) J Appl Phys , vol.61 , pp. 2282
    • Luke, L.1    Cheng, L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.