Contactless characterization of the recombination process in silicon wafers: Separation between bulk and surface contribution

Solid-State Electronics

Volumn 39, Issue 8, 1996, Pages 1165-1172

  Bernini, R ^a   Cutolo, A ^a   Irace, A ^a   Spirito, P ^a   Zeni, L ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARACTERIZATION; COMPUTER SIMULATION; INTERFEROMETRY; MATHEMATICAL MODELS; OPTICAL VARIABLES MEASUREMENT; PASSIVATION; SURFACE STRUCTURE;

BULK RECOMBINATION LIFETIME; RECOMBINATION PROCESS; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITY;

SILICON WAFERS;

EID: 0030211834     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00013-5     Document Type: Review

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