An optical technique to measure the bulk lifetime and the surface recombination velocity in silicon samples based on a laser diode probe system

Solid-State Electronics

Volumn 42, Issue 6, 1998, Pages 1035-1038

  Cutolo, A ^a   Daliento, S ^a   Sanseverino, A ^a   Vitale, G F ^a   Zeni, L ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CONTINUOUS WAVE LASERS; LASER PULSES; NEODYMIUM LASERS; PASSIVATION; SEMICONDUCTOR LASERS; SURFACE PHENOMENA; SURFACE TREATMENT; TRANSIENTS;

PUMP-PROBE OPTICAL METHOD; SURFACE RECOMBINATION VELOCITY;

SEMICONDUCTING SILICON;

EID: 0032090677     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00125-7     Document Type: Article

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