Enhancement of absorption magnitude of short-wavelength intersubband transition in InGaAs/AlAs quantum wells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 5 A, 1998, Pages 2510-2515

  Asano, Takashi ^a   Noda, Susumu ^a   Sasaki, Akio ^a,b  

^a KYOTO UNIVERSITY   (Japan)

^b OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

Author keywords

Absorption enhancement; Absorption magnitude; Carrier leakage; Intersubband transition; Short wavelength

Indexed keywords

LIGHT ABSORPTION; OPTICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS;

ABSORPTION ENHANCEMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032063844     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2510     Document Type: Article

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