Characteristics of self bias voltage and poly-Si etching in pulsed helicon wave plasma

Thin Solid Films

Volumn 345, Issue 1, 1999, Pages 124-129

  Kim, Jung Hyung ^a   Kang, Chang Jin ^a   Ahn, Tae Hyuk ^a   Moon, Joo Tae ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CORROSION RESISTANCE; DRY ETCHING; HELICONS; NATURAL FREQUENCIES; PLASMA DENSITY; PLASMA ETCHING; POLYCRYSTALLINE MATERIALS;

ION PLASMA FREQUENCY; PULSE MODULATED HELICON WAVE PLASMA; RADIOFREQUENCY BIAS; SELF BIAS VOLTAGE;

SILICON;

EID: 0033531813     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00108-X     Document Type: Article

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