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Volumn 44, Issue 9, 2000, Pages 1635-1640
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Novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC BREAKDOWN OF SOLIDS;
HETEROJUNCTIONS;
NEGATIVE RESISTANCE;
OHMIC CONTACTS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
TRANSCONDUCTANCE;
INDIUM ALUMINUM ARSENIC ANTIMONIDE;
FIELD EFFECT TRANSISTORS;
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EID: 0034272884
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1101(00)00118-0 Document Type: Article |
Times cited : (4)
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References (12)
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