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Volumn 44, Issue 9, 2000, Pages 1635-1640

Novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; HETEROJUNCTIONS; NEGATIVE RESISTANCE; OHMIC CONTACTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSCONDUCTANCE;

EID: 0034272884     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00118-0     Document Type: Article
Times cited : (4)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.