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Volumn 30, Issue 3, 2001, Pages 145-158

Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors

Author keywords

Analytic modelling; Pseudomorphic doped channel field effect transistor; Velocity overshoot

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; POISSON EQUATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

EID: 0035665258     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2001.1005     Document Type: Article
Times cited : (2)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.