InAlGaAs fully quaternary doped-channel FETs recessed by CHF3 + BCl3 reactive ion etching

Electronics Letters

Volumn 35, Issue 19, 1999, Pages 1674-1676

  Lai, Li Shyue ^a   Kao, Hung Chung ^a   Chan, Yi Jen ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC POTENTIAL; HETEROJUNCTIONS; MICROWAVES; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DOPED-CHANNEL FIELD EFFECT TRANSISTORS (DCFET); INDIUM ALUMINUM GALLIUM ARSENIDE;

FIELD EFFECT TRANSISTORS;

EID: 0032691746     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990905     Document Type: Article

References (6)

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