Novel InP/InAlGaAs negative-differential-resistance heterojunction bipolar transistor (NDR-HBT) with interesting topee-shaped current-voltage characteristics

IEEE Electron Device Letters

Volumn 20, Issue 10, 1999, Pages 510-513

  Liu, Wen Chau ^a   Wang, Wei Chou ^a   Chen, Jing Yuh ^a   Pan, Hsi Jen ^a   Cheng, Shiou Ying ^a   Thei, Kong Beng ^a   Chang, Wen Lung ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

NEGATIVE DIFFERENTIAL RESISTANCE HETEROJUNCTION BIPOLAR TRANSISTORS; PEAK-TO-VALLEY CURRENT RATIO (PVCR); TOPEE-SHAPED CURRENT VOLTAGE CHARACTERISTICS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033321356     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.791926     Document Type: Article

References (10)

1. W. Liu and A Khatibzadeh, "The collapse of current gain in multi-finger heterojunction bipolar transistors: Its substrate temperature dependence, instability criteria, and modeling," IEEE Trans. Electron Devices, vol. 41, pp. 1698-1707, 1994.
2. O. Ishikawa et al., "Advanced technologies of low-power GaAs IC's and power modules for cellular telephones," in IEEE GaAs IC Symp., 1992, pp. 131-134.
3. D. Ueda, W. S. Lee, T. Ma, D. Costa, and J. S. Harris, "GaAs/AlGaAs power heterobipolar transistor fabricated on silicon substrate," IEE Electron. Lett., vol. 25, no. 19, pp. 1268-1269, 1989.
4. A. A. Lakhani and R. C. Potter, "Combining resonant tunneling diodes for signal processing and multiple logic," Appl. Phys. Lett., vol. 52. pp. 1684-1685, 1988.
5. R. J. Malik, L. M. Lunardi, J. F. Walker, and R. W. Ryan, "A planardoped 2-D-hole gas base AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy," IEEE Electron Device Lett., vol. 9, pp. 7-9, Jan. 1988.
6. C. L. Wu and W. C. Hsu, "Enhanced resonant tunneling real-space transfer in δ-doped GaAs/InGaAs gated dual-channel transistors grown by MOCVD," IEEE Trans. Electron Devices, vol. 43, pp. 207-212, Feb. 1996.
7. J. S. Su, W. C. Hsu, Y. S. Lin, and W. Lin, "A novel InAlAs/InGaAs two-terminal real-space transfer diode," IEEE Electron Device Lett., vol. 17, pp. 43-45, 1996.
8. 7 at room temperature," IEEE Electron Device Lett., vol. 15, pp. 60-62, 1994.
9. G. B. Gao, Z. F. Fan, and H. Morkoc, "Negative output differential resistance in AlGaAs/GaAs heterojunction bipolar transistors," Appl. Phys. Lett., vol. 61, pp. 198-200, 1992.
10. T. W. Lee and P. A. Houston, "New nonthermal mechanism for negative differential resistance in heterojunction bipolar transistors," Appl. Phys. Lett., vol. 62, pp. 1777-1779, 1993.