An efficient chemical solution deposition method for epitaxial gallium nitride layers using a single-molecule precursor

Advanced Functional Materials

Volumn 11, Issue 3, 2001, Pages 224-228

  Parala, Harish ^a   Devi, Anjana ^a   Wohlfart, Andreas ^a   Winter, Manuela ^a   Fischer, Roland A ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL MICROSTRUCTURE; DEPOSITION; DIMERS; LOW TEMPERATURE EFFECTS; MORPHOLOGY; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL SOLUTION DEPOSITION METHOD; POLE FIGURE MEASUREMENTS; RECIPROCAL SPACE MAPPINGS; SINGLE MOLECULE PRECURSOR; X RAY ROCKING CURVE ANALYSIS;

GALLIUM NITRIDE;

EID: 0035382011     PISSN: 1616301X     EISSN: None     Source Type: Journal    
DOI: 10.1002/1616-3028(200106)11:3<224::AID-ADFM224>3.0.CO;2-4     Document Type: Article

References (2)

1. R. W. Schwatz, Chem. Mater. 1997, 9, 2325.
2. M. Puchinger, T. Wagner, D. Rodewald, J. Bill, F. Aldinger, F. F. Lange, J. Cryst. Growth 2000, 208, 153.