Effect of diffusion barrier in the thermally annealed exchange-biased IrMn-CoFe electrode in magnetic tunnel junctions

IEEE Transactions on Magnetics

Volumn 38, Issue 5 I, 2002, Pages 2715-2717

  Yoo, Chung Sik ^a   Jeong, H D ^a   Lee, J H ^a   Yoon, C S ^a   Kim, C K ^a   Yuh, J H ^b   Ando, Y ^c   Kubota, H ^c   Miyazaki, T ^c  

^a Hanyang University   (South Korea)

^b University of Illinois at Urbana Champaign   (United States)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Diffusion processes; Magnetic materials; Tunneling magnetoresistance

Indexed keywords

ANNEALING; ELECTRODES; IRIDIUM COMPOUNDS; MAGNETIC MATERIALS; OXIDATION; TUNNEL JUNCTIONS;

TUNNELING MAGNETORESISTANCE (TMR);

GIANT MAGNETORESISTANCE;

EID: 0036762344     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2002.803168     Document Type: Article

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