Failure of exchange-biased low resistance magnetic tunneling junctions upon thermal treatment

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 217-220

  Lee, J H ^a   Jeong, H D ^a   Kyung, H ^a   Yoon, C S ^a   Kim, C K ^a   Park, B G ^b   Lee, T D ^b  

^a Hanyang University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM METAL; ANNEALING PROCESS; ANNEALING TEMPERATURES; BIASED JUNCTIONS; CURRENT LEAKAGE; INSULATION BARRIERS; INSULATION LAYERS; LOW RESISTANCE; LOW TEMPERATURES; MAGNETIC TUNNELING JUNCTIONS; MAGNETORESISTANCE RATIO; MR RATIO; MULTILAYER STRUCTURES; PLASMA OXIDATION; STRUCTURAL UNIFORMITY; TEM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY TEM; TUNNELING JUNCTIONS;

ALUMINUM COATINGS; ELECTRIC RESISTANCE; MULTILAYERS; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING;

EID: 0036138348     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1420770     Document Type: Article

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