40% tunneling magnetoresistance after anneal at 380°C for tunnel junctions with iron-oxide interface layers

Journal of Applied Physics

Volumn 89, Issue 11 II, 2001, Pages 6665-6667

  Zhang, Zongzhi ^a   Cardoso, S ^a,b   Freitas, P P ^a,b   Batlle, X ^c   Wei, P ^d   Barradas, N ^d   Soares, J C ^d  

^a INESC   (Portugal)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^c UNIVERSITY OF BARCELONA   (Spain)

^d UNIVERSITY OF LISBON   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035356820     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1356712     Document Type: Article

References (9)

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