Electrically reversible depassivation/passivation mechanism in polycrystalline silicon

Applied Physics Letters

Volumn 68, Issue 10, 1996, Pages 1400-1402

  Suntharalingam, Vyshnavi ^a   Fonash, Stephen J ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011495459     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116093     Document Type: Article

References (6)

1. W. B. Jackson, N. M. Johnson, and D. K. Bielgelsen, Appl. Phys. Lett. 43, 195 (1983).
2. R. A. Street, Physica B 170, 69 (1990).
3. E. Cartier, J. H. Stahis, and D. A. Buchanan, Appl. Phys. Lett. 63, 1510 (1993).
4. P. K. Gopi, G. P. Li, G. J. Sonek, J. Dunkley, D. Hannaman, J. Patterson, and S. Willard, Appl. Phys. Lett. 63, 1237 (1993).
5. J. Zhao, G. P. Li, K. Y. Liao, M. R. Chin, and J. Y.-C. Sun, Appl. Phys. Lett. 62, 2950 (1993).
6. A. G. Lewis, I-W. Wu, T. Y. Huang, A. Chiang, and R. H. Bruce, IEDM Tech. Dig. 843 (1990).