An oxynitride gate dielectric for sub-30 Å complementary metal oxide semiconductor devices using precombustion of nitrous oxide

Journal of the Electrochemical Society

Volumn 149, Issue 9, 2002, Pages

  Shank, Steven M ^a   Clark, William F ^a   Hodge, Wade J ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRON SPECTROSCOPY; ELECTRON TUNNELING; FILM GROWTH; LEAKAGE CURRENTS; OXIDATION; PERMITTIVITY; REFRACTIVE INDEX; SECONDARY ION MASS SPECTROMETRY; SILICON ON INSULATOR TECHNOLOGY;

DIELECTRIC-CHANNEL INTERFACE; NITROUS OXIDE; OXYNITRIDE GATE DIELECTRIC; PRECOMBUSTION;

DIELECTRIC MATERIALS;

EID: 0036747501     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1499503     Document Type: Article

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